Scanning tunneling microscopy of GaAs multiple pn junctions
作者： S. Gwo , A. R. Smith , C. K. Shih , K. Sadra , B. G. Streetman
DOI: 10.1063/1.107682
关键词:
摘要: Scanning tunneling microscopy and spectroscopy is used to study GaAs multiple pn junction samples cleaved in ultrahigh vacuum. Direct topographic contrast over the junctions can be observed constant current imaging mode. The height p‐type regions appears much lower (by about 5 A) than that n‐type regions. Tunneling measurements show consistency with assignment of p‐ We discuss a possible mechanism for contrast.
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