作者: F. X. Zha , M. S. Li , J. Shao , Q. Y. Wang , X. R. Ren
DOI: 10.1063/1.4756938
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摘要: The vacancy doped p-type narrow band semiconductor of Hg0.73Cd0.27Te was characterized by ultra-high vacuum scanning tunneling microscopy (STM) and spectroscopy. imaging displays surprisingly different topographies for positive negative biases, between which the observed surface pits with bias are few tens nanometers shallower than their counterparts bias. effect is subjected to two local mechanisms not solely dictated electronic properties. observation contrasts conventional geometric view nanometer-scale corrugation STM topography.