作者: X.T. Li , B. Wang , M.R. Li , J.F. Chen , G.R. Han
DOI: 10.1016/J.JCRYSGRO.2007.12.057
关键词: Dielectric 、 Mineralogy 、 Sputtering 、 Thin film 、 Physical vapor deposition 、 Materials science 、 Sputter deposition 、 Analytical chemistry 、 Dielectric loss 、 Dopant 、 Perovskite (structure) 、 Inorganic chemistry 、 Materials Chemistry 、 Condensed matter physics
摘要: Abstract Mg-doped (Pb,Sr)TiO 3 thin films were prepared on ITO/glass substrate by radio frequency (RF) magnetron sputtering method. X-ray diffraction, ferroelectric analyzer and impedance used to analyze the microstructures, properties dielectric of films, respectively. Single perovskite phase solid solution obtained when Mg-doping content ranged from 0 6 molar percent. Mg 2+ substituted Ti 4+ in B-site structure acted as an acceptor-type dopant compensate unbalance electric charge produced intrinsic oxygen vacancies, resulting decreased loss films. The variation tunable PST caused doping was also studied.