Deuterium incorporation and diffusivity in plasma-exposed bulk Ga2O3
作者： Shihyun Ahn , F. Ren , Erin Patrick , Mark E. Law , S. J. Pearton
DOI: 10.1063/1.4972265
关键词: Thermal stability 、 Ion implantation 、 Annealing (metallurgy) 、 Thermal diffusivity 、 Solubility 、 Deuterium 、 Radiochemistry 、 Activation energy 、 Analytical chemistry 、 Chemistry 、 Atmospheric temperature range
摘要: Deuterium incorporation depths of ∼0.13–0.65 μm were obtained in bulk, single-crystal Ga 2 O 3 during exposure to 2 H plasmas for 0.5 h at 100–270 C. The data were fit using the …
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M. Mohamed, C. Janowitz, I. Unger, R. Manzke, Z. Galazka, R. Uecker, R. Fornari, J. R. Weber, J. B. Varley, C. G. Van de Walle, The electronic structure of β-Ga2O3 Applied Physics Letters. ,vol. 97, pp. 211903- ,(2010) , 10.1063/1.3521255
J. B. Varley, J. R. Weber, A. Janotti, C. G. Van de Walle, Oxygen vacancies and donor impurities in β-Ga2O3 Applied Physics Letters. ,vol. 97, pp. 142106- ,(2010) , 10.1063/1.3499306
Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi, Development of gallium oxide power devices Physica Status Solidi (a). ,vol. 211, pp. 21- 26 ,(2014) , 10.1002/PSSA.201330197
P. D. C. King, I. McKenzie, T. D. Veal, Observation of shallow-donor muonium in Ga2O3: Evidence for hydrogen-induced conductivity Applied Physics Letters. ,vol. 96, pp. 062110- ,(2010) , 10.1063/1.3309694
Mark E. Law, Stephen M. Cea, Continuum based modeling of silicon integrated circuit processing: An object oriented approach Computational Materials Science. ,vol. 12, pp. 289- 308 ,(1998) , 10.1016/S0927-0256(98)00020-2
Roberto Fornari, Sergei Rouvimov, Alan Seabaugh, Chris Van de Walle, Wan Sik Hwang, Hartwin Peelaers, Debdeep Jena, Vladimir Protasenko, Zbigniew Galazka, Wilfried Haensch, Huili Grace Xing, Amit Verma, Martin Albrecht, High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes Applied Physics Letters. ,vol. 104, pp. 203111- ,(2014) , 10.1063/1.4879800
Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi, Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates Applied Physics Letters. ,vol. 100, pp. 013504- ,(2012) , 10.1063/1.3674287
R. G. Wilson, S. J. Pearton, C. R. Abernathy, J. M. Zavada, Outdiffusion of deuterium from GaN, AlN, and InN Journal of Vacuum Science and Technology. ,vol. 13, pp. 719- 723 ,(1995) , 10.1116/1.579814
Daoyou Guo, Zhenping Wu, Peigang Li, Yuehua An, Han Liu, Xuncai Guo, Hui Yan, Guofeng Wang, Changlong Sun, Linghong Li, Weihua Tang, Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology Optical Materials Express. ,vol. 4, pp. 1067- 1076 ,(2014) , 10.1364/OME.4.001067
Shinji Nakagomi, Toshihiro Momo, Syuhei Takahashi, Yoshihiro Kokubun, Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction Applied Physics Letters. ,vol. 103, pp. 072105- ,(2013) , 10.1063/1.4818620