Formation of functional gate structures with different critical dimensions using a replacement gate process
作者： Sameer H. Jain
DOI:
关键词: Optoelectronics 、 Gate oxide 、 Substrate (electronics) 、 Materials science 、 Structural engineering 、 Metal gate 、 Process (computing)
摘要: A plurality of sacrificial gate structures is formed on substrate. first set the contains a spacer sidewall surfaces thereof, and second has bare surfaces. dielectric provided to sets structures. Each structure removed together with spacers providing cavities in area previously occupied by functional each cavities.
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