Replacement metal gate method
作者： Keith Kwong Hon Wong , Dechao Guo , Jun Yuan , Yanfeng Wang , Gan Wang
DOI:
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摘要: A method includes forming a dummy gate in dielectric layer on substrate, the including sacrificial oxide and body over layer; removing resulting opening with bottom of opening; performing an off-axis sputtering to create angled entrance replacement opening.
lens.org参考文章(5)
Bradley J. Howard, Thomas A. Figura, Mask having a tapered profile used during the formation of a semiconductor device ,(1998)
Mark Doczy, Chris E. Barns, Polysilicon opening polish ,(2004)
Kuei-Lung Chou, Pei-Jan Wang, Jiunn-Jyi Lin, Hsien-Wen Chang, Taper etching without re-entrance profile ,(1995)
Clyde R. Fuller, Victor C. Sutcliffe, Method of forming a via having sloped sidewalls ,(1992)
Paul David Cruzan, Thomas Charles Tisone, Selective removal of material by sputter etching ,(1974)