Dry etch polysilicon removal for replacement gates
作者： Klaus Hempel , Chris M. Prindle , Andy C. Wei
DOI:
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摘要: Semiconductor devices are formed with a gate last, high-K/metal process complete removal of the polysilicon dummy and gap having low aspect ratio for metal fill. Embodiments include forming electrode on substrate, nitride cap, spacers adjacent opposite sides trench therebetween, dry etching tapering top corners; performing selective etch portion electrode, wet remainder electrode.
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