Mask having a tapered profile used during the formation of a semiconductor device
作者： Bradley J. Howard , Thomas A. Figura
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摘要: A method and apparatus for improving the accuracy of a contact to an underlying layer comprises steps forming first photoresist over layer, mask then patterned second layer. The is using as pattern pattern. tapered hole formed in example anisotropic etch. has bottom proximate top distal with being wider than hole.
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