(RIE) Plasma process for making metal-semiconductor ohmic type contacts

摘要: An improved process of RIE plasma attack the layer dielectric material on surface wafers semiconductor material, in correspondence areas purposely defined by masking, for exposing underlying crystal, preparation depositing a metallic conduction. After having removed certain thickness according to known technique, conditions are modified, substituting gases and reducing "bias". The is resumed residual preferably also crystal same reactor. Ohmic contacts with relatively low contact resistance great reliability obtained minimum handling wafers.