Method of producing polysilicon structure in the 1 μm range on substrates containing integrated semiconductor circuits by plasma etching

摘要: ABSTRACT OF THE DISCLOSUREPolysilicon structures down to a 1 µm range on substrates containing integrated semiconductor circuits are produced by plasma etching in plate reactor with the use of SF6 and an inert gas as reactive gas. During this process, crystal wafers covered SiO2 layer polysilicon is provided etch mask positioned grounded electrode which achieves high selectivity mask, carried out HF power, P, < 0.1 watt/cm2, pressure, p, ranging from 60 120 Pa, temperature 20° 60°C. With inventive large scale single stage sequence selectivity, uniform throughput silicon wafers.