Silicon trench etch
作者： Davod J. Drage , Toufic Safi
DOI:
关键词:
摘要: An improved method is disclosed for obtaining relatively deep (6 microns) trenches in single crystal silicon wafers. The comprises exposing the wafer to a plasma formed gas mixture comprising Freon 11 (CCl3 F), sulphur hexafluoride (SF6) and either helium or argon. etch takes place at pressure of 1-3 torr (133-400 Pa) narrow gap mm.) planar reactor.
lens.org 参考文章(2)
Barbara Hasler, Willy Beinvogl, Method of producing polysilicon structure in the 1 μm range on substrates containing integrated semiconductor circuits by plasma etching ,(1982)
Adir Jacob, Selective plasma polysilicon etching ,(1981)