MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要: PURPOSE:To provide the manufacturing method, of a semiconductor device, wherein device can be worked to thin without making chip large-sized. CONSTITUTION:An n epitaxial layer 102 is formed on p single-crystal silicon substrate (wafer) 101, and an integrated circuit part provided with aluminum interconnection 121 for isolation high potential in 102. In addition, 128 used supply electrochemical etching scribing-line region 102, are connected via diffused 127 potential, prescribed 101 removed by operation using 128, diaphragm formed. Lastly, scribing cut form chip, pressure sensor manufactured.