作者: F. Khateb , S. Vlassis , S. Bay Abo Dabbous
DOI:
关键词: Amplifier 、 Electronic circuit 、 CMOS 、 Integrated circuit 、 Transconductance 、 Low voltage 、 Transistor 、 Voltage 、 Electrical engineering 、 Engineering 、 Electronic engineering
摘要: Designing integrated circuits able to work under low-voltage (LV) low-power (LP) condition is currently undergoing a very considerable boom. Reducing voltage supply and power consumption of crucial factor since in general it ensures the device reli- ability, prevents overheating particu- lar prolongs operation period for battery powered devices. Recently, non-conventional techniques i.e. bulk- driven (BD), floating-gate (FG) quasi-floating-gate (QFG) have been proposed as powerful ways reduce design complexity push towards threshold MOS transistors (MOST). Therefore, this paper presents principle, advantages disadvantages each these techniques, enabling circuit designers choose proper technique based on application requirements. As an exam- ple three operational transconductance amplifiers (OTA) tech- niques are presented, only ±0.4 V 23.5 μW. PSpice simulation results using 0.18 μm CMOS technology from TSMC included verify functionality corre- spondence with theory.