High data rate write process for non-volatile flash memories

摘要: A non-volatile semiconductor memory includes: multiple write pipelines, each including a array; timing circuit which sequentially starts programming operations in the pipelines; and shared charge pump voltage regulation that drives current through cells being programmed. Staggering of reduces demand on because spikes occur at operations, for example, when using channel hot electron injection, are distributed over time rather than occurring all once. Noise, can reduce accuracy is also reduced total required from more nearly constant. As further aspect invention, pipeline perform operation as alternating cycles verify cycles. During cycle, selected cell to change threshold cell. determines whether has reached its target level. The pipelines be partitioned into two banks where one bank while other More generally times differ banks.