Layer-by-layer etching method of photoluminescence testing applied to VCSEL structure epitaxial wafer and VCSEL structure epitaxial wafer
作者： Li Yiyang , Zhang Yang
DOI:
关键词: Vertical-cavity surface-emitting laser 、 Laser etching 、 Photoluminescence 、 Materials science 、 Laser 、 Epitaxy 、 Etching (microfabrication) 、 Layer by layer 、 Wafer 、 Optoelectronics
摘要: The invention discloses a layer-by-layer etching method of photoluminescence testing applied to VCSEL structure epitaxial wafer and the wafer. comprises following steps: (1) putting laser device above wafer, enabling emergent light aligns with epitaxialwafer; (2) adjusting diameter spot, irradiated onto be 1.5 2.5 mm, output power 500W; (3) carrying out on by device, stopping until depth reaches 3 to5 microns. According an area is in circle shape 5
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