Investigation of narrow-band thermal emission from intersubband transitions in quantum wells
作者： M. De Zoysa , T. Asano , T. Inoue , K. Mochizuki , S. Noda
DOI: 10.1063/1.4930030
关键词: Molecular physics 、 Wavelength 、 Gallium arsenide 、 Quantum well 、 Emissivity 、 Materials science 、 Laser linewidth 、 Doping 、 Condensed matter physics 、 Thermal 、 Thermal conduction
摘要: We investigate thermal emission from n-doped GaAs/AlGaAs quantum wells (QWs). Emission peaks with Lorentzian shapes (linewidth 11∼19 meV) that reflect transitions between the first and second conduction subbands are observed in mid-infrared range. It is demonstrated characteristics can be tuned by modifying QW parameters. The peak emissivity increased 0.3 to 0.9 doping density, wavelength 6 10 μm changing well width. obtained results useful for design of narrow-band emitters.
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