Raman spectrum study of δ-doped GaAs/AlAs multiple-quantum wells*
作者： Wei-Min Zheng , Wei-Yan Cong , Su-Mei Li , Ai-Fang Wang , Bin Li
DOI: 10.1088/1674-1056/27/1/017302
关键词:
摘要: Three samples of GaAs/AlAs multiple-quantum wells with different quantum well widths and δ-doped Be acceptors at the center were grown on (100) GaAs substrates by molecular beam epitaxy. Polarized Raman spectra recorded three temperatures in a range 4–50 K backscattering configuration. The two branches coupled modes due to interaction hole intersubband transitions quantum-well longitudinal optical (LO) phonon observed clearly. evaluation formalism Green function was employed each lineshape spectrum simulated. dependence peak position shifts as LO size measured temperature given, coupling mechanism between subband researched.
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