The effect of sulfur segregation on the adherence of the thermally-grown oxide on NiAl-II: The oxidation behavior at 900°C of standard, desulfurized or sulfur-doped NiAl(001) single-crystals
作者： L. Rivoaland , V. Maurice , P. Josso , M.-P. Bacos , P. Marcus
关键词: Nial 、 Oxide 、 Chemical engineering 、 Nucleation 、 Materials science 、 Nickel aluminide 、 Metallurgy 、 Alloy 、 Vacancy defect 、 Sulfur 、 Aluminium alloy
摘要: In Part II of this study, the characterization by TGA, SEM and AFM oxidation behavior at 900°C NiAl(001) samples with various sulfur concentrations is reported. The formation interfacial cavities observed for all samples. A constant ratio oxide thickness to cavity depth found showing that metal–oxide interface not due but only vacancy injection during cationic growth transient θ-alumina. It also presence in alloy decreases rate nickel aluminide and, consequently, lowers cavities. This effect interpreted as an indirect evidence control transient-alumina aluminium diffusion alloy, advanced explanation nucleation alpha alumina. These results are combined those presented I propose a model explains how sulfur, present small quantities has deleterious on adherence. role formed alumina create transitory conditions rapid segregation interface. segregated remains vestige initial stages after transformation scale into mature weakens its
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