High-resolution SIMS and analytical TEM evaluation of alumina scales on β -NiAl containing Zr or Y

摘要: High-resolution SIMS and TEM have been used to evaluate growth processes interfacial segregation occurring in α-Al2O3 scales grown at 1200°C on β-NiAl containing zirconium or yttrium.18O/SIMS shows that the extent of aluminum diffusion during is reduced by presence these alloying elements, which are seen imaging as oxide particles within scale. STEM/EDS same show yttrium also segregated oxide-alloy interface extent, respectively, ≈0.15 ≈0.07 a monolayer grain boundaries (≈0.2 monolayer). The complementary information provided SIMS, TEM, STEM provides better understanding role “reactive elements” modifying scale-growth processes.