作者: C. M. Hangarter , B. H. Hamadani , J. E. Guyer , H. Xu , R. Need
DOI: 10.1063/1.3561487
关键词: Cadmium telluride photovoltaics 、 Silicon 、 Thin film 、 Electrode 、 Wide-bandgap semiconductor 、 Heterojunction 、 Optoelectronics 、 Materials science 、 Semiconductor 、 Wafer
摘要: Three dimensionally structured thin film photovoltaic devices based on interdigitated arrays of microscale electrodes are examined by external quantum efficiency simulations, indicating considerable JSC enhancement is possible through elimination the front contact and window layer required in planar geometry devices. Electrode parameters including, pitch, width, height, material modeled experimentally probed, demonstrating capturing models dependence intrinsic properties electrode dimensions. In contrast to analogous silicon wafer back solar cells where placed absorber at end processing, this design semiconductor deposited electrodes, taking advantage processing already required. Electrodeposited CdS/CdTe heterojunction approach 1% efficiencies with simulations as well optical measurements significant potential for improvement. Suboptimal performance...