Photoelectrochemical study of thin film semiconductor heterostructures: junction formation processes in CdS
作者： Andreas Kampmann , Daniel Lincot
DOI: 10.1016/S0022-0728(96)04780-8
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摘要: Abstract A photoelectrochemical study of SnO2¦CdS¦CdTe thin film heterostuctures in contact with an electrolyte has been carried out. Upon thermal annealing treatment the isotype structure SnO2(n)¦CdS(n)¦CdTe(n) is converted into n¦n¦p structure, due to type conversion CdTe layer. This process basis formation efficient CdS¦CdTe solar cells. In a transistor-like n¦n¦p¦n formed. theoretical analysis behaviour this presented. By changing applied potential relative contributions from internal barrier and outer CdTe¦electrolyte can be separated. The simulation spectral responses allows one determine semiconducting properties semiconductors involved those barrier. improvement p-type caused by CdCl2 surface before confirmed method.
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