Effects of ageing on the electrical characteristics of Cd/CdS/n-Si/Au–Sb structure deposited by SILAR method
作者： Betül Güzeldir , Mustafa Sağlam , AYTUNÇ Ateş , ABDULMECİT Türüt
DOI: 10.1016/J.JPCS.2011.09.008
关键词:
摘要: Abstract Cd/CdS/ n -Si/Au–Sb structure has been fabricated by the S uccessive I onic L ayer A dsorption and R eaction (SILAR) method influence of time dependent or ageing on characteristic parameters are examined. The current–voltage ( – V ), capacitance–voltage C ) capacitance–frequency f characteristics have measured immediately, 1, 3, 5, 15, 30, 45, 60, 75, 90, 105, 120, 135, 150 165 days after fabrication structure. such as barrier height, ideality factor, series resistance calculated from measurements carrier concentration values reverse bias − 2 at 500 kHz room temperature. Furthermore, density distribution constant interface states using Schottky Capacitance Spectroscopy a function time. It seen that changes factor lightly changed with increasing At same time, rectifying ratio device increases can be clearly said get better
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