Temperature dependent electrical properties of Cd/CdS/n-Si/Au-Sb structures
作者： B. Güzeldir , M. Sağlam
DOI: 10.1016/J.MSSP.2014.09.020
关键词: Charge carrier 、 Materials science 、 Atmospheric temperature range 、 Analytical chemistry 、 Equivalent series resistance 、 Nanotechnology 、 Depletion region 、 Conductance method 、 Reverse bias 、 State density
摘要: Abstract The temperature dependent electrical properties of Cd/CdS/n-Si/Au–Sb structure were investigated using current–voltage (I–V), capacitance–voltage (C–V) and conductance–voltage (G/w–V) characteristics in the range 80–300 K. main parameters, such as ideality factor (n) zero-bias barrier height (Φb0) determined from forward bias I–V found strongly on when Φb0 increased, n decreased with increasing temperature. This behaviors are attributed to assumption a Gaussian distribution heights inhomogenities that dominance at metal–semiconductor interface. C–V plots give peak especially high temperatures depletion region was increased both values C G/w decreased. These mainly molecular restructuring reordering interface states series resistance. value resistance ( R s ) state density N G/w–V change may be explained by lack free charge carriers. Also, carrier concentration calculated reverse C−2–V 500 kHz frequency
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