The interface state density characterization by temperature-dependent capacitance-conductance-frequency measurements in Au/Ni/n-GaN structures

摘要: We have fabricated the Au/Ni/n-GaN structures and measured their capacitance–frequency (C–f) conductance (G/w)-angular frequency (w) characteristics in temperature range of 60–320 K. The C–f curves for different reverse bias voltages shown a behavior almost independent voltage at frequencies above 300 kHz each measurement temperature. calculated temperature-dependent interface state density, Nss, values from G/w versus w curves. Nss value Ni/n-GaN ranges 3.36 × 1011 cm−2 eV−1 0.0 V to 2.92 0.40 60 K, 6.63 3.87 320 That is, density increases with increasing It has been seen that obtained device are lower than given metal/n-type GaN literature.