Capacitance-voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation-hard detectors
作者： S.J. Moloi , M. McPherson
DOI: 10.1016/J.RADPHYSCHEM.2012.12.002
关键词: Diode 、 Schottky diode 、 Metal–semiconductor junction 、 Schottky barrier 、 Silicon 、 Doping 、 Semiconductor 、 Materials science 、 Electrical resistivity and conductivity 、 Optoelectronics
摘要: Abstract Capacitance–voltage measurements were carried out on Schottky diodes fabricated undoped and metal-doped p-type silicon. The metals used are gold, platinum, erbium niobium. obtained results to investigate the effects of silicon material by inference from electrical properties diodes. data extract doping density barrier height device. show that platinum niobium all reduce while increases it. A reduction shows resistivity has increased. This increase is caused defects created in energy gap compensate charge carriers turn into a relaxation material. Devices have been found perform better as radiation-hard detectors. independent it not bulk property.
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