The electrical properties of semi-insulating GaAs analysed as a relaxation semiconductor
作者： B.K. Jones , J. Santana , M. McPherson
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摘要: From experiments on semi-insulating (SI) GaAs diodes it is shown that the results can be analysed using relaxation semiconductor theory. This most apparent for P-SI-N or Schottky-SI-Ohmic and agreement improves after irradiation when ratio of generation-recombination (g-r) centres to deep levels increases.
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