The comparison of electrical characteristics of Au/n-InP/In and Au/In2S3/n-InP/In junctions at room temperature
作者： T. Çakıcı , M. Sağlam , B. Güzeldir
DOI: 10.1016/J.MSEB.2014.11.003
关键词:
摘要: We fabricated Au/n-InP/In and Au/In 2 S 3 /n-InP/In junctions and investigated their electrical properties at room temperature. The In 2 S 3 thin film has been directly formed on n-type InP …
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sci-hub.se 参考文章(37)
Betül Güzeldir, Mustafa Sağlam, AYTUNÇ Ateş, ABDULMECİT Türüt, Effects of ageing on the electrical characteristics of Cd/CdS/n-Si/Au–Sb structure deposited by SILAR method Journal of Physics and Chemistry of Solids. ,vol. 72, pp. 1506- 1514 ,(2011) , 10.1016/J.JPCS.2011.09.008
Mamta Sharma, S. K. Tripathi, Study of barrier inhomogeneities in I–V-T and C-V-T characteristics of Al/Al2O3/PVA:n-ZnSe metal–oxide–semiconductor diode Journal of Applied Physics. ,vol. 112, pp. 024521- ,(2012) , 10.1063/1.4737589
K. Otto, A. Katerski, A. Mere, O. Volobujeva, M. Krunks, Spray pyrolysis deposition of indium sulphide thin films Thin Solid Films. ,vol. 519, pp. 3055- 3060 ,(2011) , 10.1016/J.TSF.2010.12.027
N. Barreau, Indium sulfide and relatives in the world of photovoltaics Solar Energy. ,vol. 83, pp. 363- 371 ,(2009) , 10.1016/J.SOLENER.2008.08.008
A. Singh, Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation Solid-state Electronics. ,vol. 28, pp. 223- 232 ,(1985) , 10.1016/0038-1101(85)90002-4
B Güzeldir, M Sağlam, A Ateş, None, Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au–Sb structure fabricated using SILAR method as a function of temperature Journal of Alloys and Compounds. ,vol. 506, pp. 388- 394 ,(2010) , 10.1016/J.JALLCOM.2010.07.013
M Sağlam, B Güzeldir, A Ateş, E Buğur, None, Temperature dependence of current–voltage characteristics of the Cd/CdS/n-GaAs/In sandwich structure Journal of Physics and Chemistry of Solids. ,vol. 74, pp. 370- 376 ,(2013) , 10.1016/J.JPCS.2012.10.016
Taketomo Sato, Shouichi Uno, Tamotsu Hashizume, Hideki Hasegawa, Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process Japanese Journal of Applied Physics. ,vol. 36, pp. 1811- 1817 ,(1997) , 10.1143/JJAP.36.1811
H. Norde, A modified forward I‐V plot for Schottky diodes with high series resistance Journal of Applied Physics. ,vol. 50, pp. 5052- 5053 ,(1979) , 10.1063/1.325607
V. Rajagopal Reddy, A. Umapathi, S. Sankar Naik, Influence of Annealing on Electrical Properties of an Organic Thin Layer-Based n-Type InP Schottky Barrier Diode Journal of Electronic Materials. ,vol. 42, pp. 1282- 1289 ,(2013) , 10.1007/S11664-013-2592-1