作者: Laura Serrano-De la Rosa , Abel Moreno , Mauricio Pacio
DOI: 10.3390/CRYST7070194
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摘要: In this work, we report the electrical properties of cytochrome C (Cyt C) inside porous silicon (PSi). We first used two techniques protein infiltration: classic sitting drop and electrochemical migration methods. The electrochemically assisted cell, for infiltration by electro-migration, improved Cyt nucleation crystallization behavior due to PSi. were able carry out thanks previous proteins Si pores network. then continued crystal growth through a vapor diffusion set-up. Secondly, applied both forward reverse bias currents only infiltrated C. Finally, characteristics compared control (the molecules which not infiltrated) samples without infiltration. linker in method influenced properties, showed modification current density. simple density ~42 A/cm2; when employing cell technique, was ~318 crystallized structures, it ~0.908 A/cm2.