Temperature dependence of interface-state density distributions in Cu/CuO/n-type Si structures
Kadir Ejderha , Şükrü Karataş , Hasan Efeoğlu , Ö. Faruk Bakkaloğlu
Materials Today: Proceedings
2021
Arayüzey Doğal Oksit Tabakalı Al/p-Si/Al Yapıların Dielektrik Karakteristiklerine Ölçüm Frekansının Etkileri
Mehmet Can ÖZDEMİR , Ömer SEGİLİ , İkram ORAK , Abdülmecit TÜRÜT
Journal of the Institute of Science and Technology 10 ( 1) 91 -100
2020
Electrical characteristics of Au/Ti/HfO2/n-GaAs metal-insulator-semiconductor structures with high-k interfacial layer
Abdulkerim KARABULUT , İkram ORAK , Abdülmecit TÜRÜT
International Journal of Chemistry and Technology 2 ( 2) 116 -122
8
2018
Origin and frequency dependence of the anomalous peak in forward capacitance-voltage characteristics of Schottky diodes
Abdülmecit TÜRÜT , MUSTAFA SAĞLAM , Bahri BATI , ALİ KÖKCE
Turkish Journal of Physics 19 ( 4) 601 -612
1
1995
Electrical properties of polypyrrole/p‐InP structure
Şak??r Aydoğan , Mustafa Sağlam , Abdulmec??t Türüt
Journal of Polymer Science Part B 44 ( 11) 1572 -1579
7
2006
The effect of series resistance on calculation of the interface state density distribution in Schottky diodes
E. Ayyildiz , C. Temirci , B. Bati , A. TÜrÜt
International Journal of Electronics 88 ( 6) 625 -633
9
2001
Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts
Abdulmecit TÜRÜT
Turkish journal of physics 44 ( 4) 302 -347
72
2020
COMPARISON OF THE Ti/n-GaAs SCHOTTKY CONTACTS’ PARAMETERS FABRICATED USING DC MAGNETRON SPUTTERING AND THERMAL EVAPORATION
OSMAN KAHVECI , ABDULLAH AKKAYA , ENISE AYYILDIZ , ABDÜLMECIT TÜRÜT
Surface Review and Letters 24 ( 04) 1750047
9
2017
Effect of the Al 2 O 3 interfacial layer thickness on the measurement temperature-induced I--V characteristics in Au/Ti/Al 2 O 3/n-GaAs structures
Abdulmecit , Turut and Abdulkerim , Karabulut and Hasan , Efeoǧlu
Journal of Materials Science. Materials in Electronics 32 ( 17) 22680 -22688
2021
Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures
Ömer Güllü , Özlem Barış , Mehmet Biber , ABDULMECİT Türüt
Applied Surface Science 254 ( 10) 3039 -3044
55
2008
DNA-based organic-on-inorganic semiconductor Schottky structures
Ömer Güllü , MURAT Çankaya , Özlem Barış , Mehmet Biber
Applied Surface Science 254 ( 16) 5175 -5180
31
2008
Analysis of interface states and series resistances in Au/p-InP structures prepared with photolithography technique
DEMET Korucu , Şükrü Karataş , ABDULMECİT Türüt ,
Indian Journal of Physics 87 ( 8) 733 -740
4
2013
Current-voltage and capacitance-voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts
Bahattin Abay , Y Onganer , M Saǧlam , H Efeoǧlu
Microelectronic Engineering 51 ( 1) 689 -693
15
2000
Effects of ageing on the electrical characteristics of Cd/CdS/n-Si/Au–Sb structure deposited by SILAR method
Betül Güzeldir , Mustafa Sağlam , AYTUNÇ Ateş , ABDULMECİT Türüt
Journal of Physics and Chemistry of Solids 72 ( 12) 1506 -1514
16
2011
Electronic parameters of high barrier Au/Rhodamine-101/n-Inp Schottky diode with organic ınterlayer
Ömer Güllü , S Aydoğan , ABDULMECİT Türüt
Thin Solid Films 520 ( 6) 1944 -1948
32
2012
Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs
Ahmet Gümüş , ABDULMECİT Türüt , N Yalcin
Journal of Applied Physics 91 ( 1) 245 -250
258
2002
The interface state energy distribution from capacitance–frequency characteristics of gold/n-type Gallium arsenide Schottky barrier diodes exposed to air
AF Özdemir , ABDULMECİT Türüt , A Kokce
Thin Solid Films 425 ( 1) 210 -215
33
2003
Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process
M Bı̇ber , C Temı̇rcı̇ , ABDULMECİT Türüt
Journal of Vacuum Science & Technology B 20 ( 1) 10 -13
31
2002
Barrier height enhancement and stability of the Au∕n-InP Schottky barrier diodes oxidized by absorbed water vapor
HİDAYET Çetin , ENİSE Ayyildiz , ABDULMECİT Türüt
Journal of Vacuum Science & Technology B 23 ( 6) 2436 -2443
25
2005
Low- and high-frequency C-V characteristics of the contacts formed by sublimation of the nonpolymeric organic compound on p-type Si substrate
Cabir Temirci , Muzaffer Çakar , ABDULMECİT Türüt , Yavuz Onganer
Physica Status Solidi (a) 201 ( 14) 3077 -3086
18
2004