Very Large Rashba Spin–Orbit Splitting in HgTe Quantum Wells

摘要: A large Rashba spin splitting has been observed in the first conduction subband of n-type modulation doped HgTe quantum wells with an inverted band structure via investigation Shubnikov–de Haas oscillations as a function gate voltage. Self-consistent Hartree calculations based on 8 × k ⋅ p model quantitatively describe experimental results. It shown that heavy-hole nature H1 greatly influences spatial distribution electrons well and also enhances at electron densities. These are unique features type III heterostructures regime. The βk3∥ dispersion predicted by analytical is good approximation self-consistent for small values in-plane wave vector k∥. This contrast to commonly used αk∥ I heterojunctions.