Gate Control of Spin-Orbit Interaction in an Inverted In0.53Ga0.47As/In0.52Al0.48As Heterostructure
作者： Junsaku Nitta , Tatsushi Akazaki , Hideaki Takayanagi , Takatomo Enoki
DOI: 10.1103/PHYSREVLETT.78.1335
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摘要: We have confirmed that a spin-orbit interaction in an inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As quantum well can be controlled by applying a gate voltage. This result shows that …
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Supriyo Datta, Biswajit Das, Electronic analog of the electro‐optic modulator Applied Physics Letters. ,vol. 56, pp. 665- 667 ,(1990) , 10.1063/1.102730
R. Eppenga, M. F. H. Schuurmans, Effect of bulk inversion asymmetry on [001], [110], and [111] GaAs/AlAs quantum wells Physical Review B. ,vol. 37, pp. 10923- 10926 ,(1988) , 10.1103/PHYSREVB.37.10923
H. Riechert, S. F. Alvarado, A. N. Titkov, V. I. Safarov, Precession of the Spin Polarization of Photoexcited Conduction Electrons in the Band-Bending Region of GaAs (110) Physical Review Letters. ,vol. 52, pp. 2297- 2300 ,(1984) , 10.1103/PHYSREVLETT.52.2297
N.E. Christensen, M. Cardona, Splitting of the conduction bands of GaAs for k along [110] Solid State Communications. ,vol. 51, pp. 491- 493 ,(1984) , 10.1016/0038-1098(84)91019-6
P. D. Dresselhaus, C. M. A. Papavassiliou, R. G. Wheeler, R. N. Sacks, Observation of spin precession in GaAs inversion layers using antilocalization. Physical Review Letters. ,vol. 68, pp. 106- 109 ,(1992) , 10.1103/PHYSREVLETT.68.106
Yu A Bychkov, E I Rashba, Oscillatory effects and the magnetic susceptibility of carriers in inversion layers Journal of Physics C: Solid State Physics. ,vol. 17, pp. 6039- 6045 ,(1984) , 10.1088/0022-3719/17/33/015
G. Lommer, F. Malcher, U. Rossler, Spin splitting in semiconductor heterostructures for B-->0. Physical Review Letters. ,vol. 60, pp. 728- 731 ,(1988) , 10.1103/PHYSREVLETT.60.728
J. Luo, H. Munekata, F. F. Fang, P. J. Stiles, Effects of inversion asymmetry on electron energy band structures in GaSb/InAs/GaSb quantum wells. Physical Review B. ,vol. 41, pp. 7685- 7693 ,(1990) , 10.1103/PHYSREVB.41.7685
B. Das, D. C. Miller, S. Datta, R. Reifenberger, W. P. Hong, P. K. Bhattacharya, J. Singh, M. Jaffe, Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0 Physical Review B. ,vol. 39, pp. 1411- 1414 ,(1989) , 10.1103/PHYSREVB.39.1411
Tatsushi Akazaki, Takatomo Enoki, Kunihiro Arai, Yasunobu Ishii, Improving the characteristics of an inverted HEMT by inserting an InAs layer into the InGaAs channel Solid-state Electronics. ,vol. 38, pp. 997- 1000 ,(1995) , 10.1016/0038-1101(95)98667-R