Spin splitting in semiconductor heterostructures for B-->0.
作者： G. Lommer , F. Malcher , U. Rossler
DOI: 10.1103/PHYSREVLETT.60.728
关键词:
摘要: Spin splitting of subband states in semiconductor heterostructures at B=0 is ascribed to the inversion asymmetry--induced bulk ${\mathrm{k}}^{3}$ term, which dominates large-gap materials, and interface spin-orbit or Rashba becomes important narrow-gap systems. We show for AlGaAs/GaAs how this finite spin evolves from Zeeman B\ensuremath{\ne}0 predict a vanishing -magnetic- field ---, depends on electron concentration layer.
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sci-hub.se 参考文章(19)
H. Riechert, S. F. Alvarado, A. N. Titkov, V. I. Safarov, Precession of the Spin Polarization of Photoexcited Conduction Electrons in the Band-Bending Region of GaAs (110) Physical Review Letters. ,vol. 52, pp. 2297- 2300 ,(1984) , 10.1103/PHYSREVLETT.52.2297
N.E. Christensen, M. Cardona, Splitting of the conduction bands of GaAs for k along [110] Solid State Communications. ,vol. 51, pp. 491- 493 ,(1984) , 10.1016/0038-1098(84)91019-6
U. Rössler, Nonparabolicity and warping in the conduction band of GaAs Solid State Communications. ,vol. 49, pp. 943- 947 ,(1984) , 10.1016/0038-1098(84)90299-0
Wolfgang Kauschke, Narcís Mestres, Manuel Cardona, Spin relaxation of holes in the split-hole band of InP and GaSb. Physical Review B. ,vol. 35, pp. 3843- 3853 ,(1987) , 10.1103/PHYSREVB.35.3843
D. Stein, K. v. Klitzing, G. Weimann, Electron Spin Resonance on G a A s − Al x Ga 1 − x As Heterostructures Physical Review Letters. ,vol. 51, pp. 130- 133 ,(1983) , 10.1103/PHYSREVLETT.51.130
D. Stein, G. Ebert, K. von Klitzing, G. Weimann, Photoconductivity on GaAs-AlxGa1−xAs heterostructures Surface Science. ,vol. 142, pp. 406- 411 ,(1984) , 10.1016/0039-6028(84)90342-X
Yu A Bychkov, E I Rashba, Oscillatory effects and the magnetic susceptibility of carriers in inversion layers Journal of Physics C: Solid State Physics. ,vol. 17, pp. 6039- 6045 ,(1984) , 10.1088/0022-3719/17/33/015
G. Lommer, F. Malcher, U. Rössler, Reduced g factor of subband Landau levels in AlGaAs/GaAs heterostructures Physical Review B. ,vol. 32, pp. 6965- 6967 ,(1985) , 10.1103/PHYSREVB.32.6965
L.J. Sham, G.E. Marques, Theory of space-charge layers in narrow-gap semiconductors Surface Science Letters. ,vol. 113, pp. 131- 136 ,(1982) , 10.1016/0039-6028(82)90573-8
Fusayoshi J. Ohkawa, Yasutada Uemura, Quantized Surface States of a Narrow-Gap Semiconductor Journal of the Physical Society of Japan. ,vol. 37, pp. 1325- 1333 ,(1974) , 10.1143/JPSJ.37.1325