Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions
作者： Basanta Roul , Mahesh Kumar , Mohana K. Rajpalke , Thirumaleshwara N. Bhat , A.T. Kalghatgi
DOI: 10.1016/J.SSC.2012.06.023
关键词: Electrical transport 、 Dispersion relation 、 Absorption edge 、 Conduction band 、 Materials science 、 Molecular beam epitaxy 、 Optoelectronics 、 Heterojunction 、 Plasma 、 Schottky diode
摘要: Abstract We present the study involving dependence of carrier concentration InN films, grown on GaN templates using plasma assisted molecular beam epitaxy system, growth temperature. The influence electrical transport behavior InN/GaN heterostructure based Schottky junctions is also discussed. optical absorption edge film was found to be strongly dependent concentration, and described by Kane's k.p model, with non-parabolic dispersion relation for in conduction band. position Fermi-level films modulated films. barrier height heterojunctions as estimated from I – V characteristic InN.
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