Basanta Roul
机构: Researcher at Central Research Laboratory-BEL and Materials Research Centre-IISc
每年引用次数
引用次数
引用: 1,572
H-指数: 23
I10-指数 : 58
出版物: 104
Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
Basanta Kumar Roul
Indian Institute of Science
2016
Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors
Deependra Kumar Singh , Basanta Kumar Roul , Karuna Kar Nanda , Saluru Baba Krupanidhi
Light-Emitting Diodes and Photodetectors-Advances and Future Directions
4
2021
Defect mediated self-powered, broad band and ultrafast InGaN based photodetector
ARUN CHOWDHURY , Rohit Pant , Basanta Roul , Deependra Singh
Bulletin of the American Physical Society
2020
Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions
Basanta Roul , Thirumaleshwara N. Bhat , Mahesh Kumar , Mohana K. Rajpalke
Solid State Communications 151 ( 20) 1420 -1423
14
2011
Effect of carrier concentration of InN on the transport behavior of InN/GaN heterostructure based Schottky junctions
Basanta Roul , Mahesh Kumar , Mohana K. Rajpalke , Thirumaleshwara N. Bhat
Solid State Communications 152 ( 18) 1771 -1775
2
2012
Negative differential capacitance in n-GaN/p-Si heterojunctions
Mahesh Kumar , Thirumaleshwara N. Bhat , Mohana K. Rajpalke , Basanta Roul
Solid State Communications 151 ( 5) 356 -359
11
2011
Temperature-dependent photoluminescence of GaN grown on β-Si3N4/Si (1 1 1) by plasma-assisted MBE
Mahesh Kumar , Mohana K. Rajpalke , Basanta Roul , Thirumaleshwara N. Bhat
Journal of Luminescence 131 ( 4) 614 -619
9
2011
Valence band offset at GaN/β-Si3N4 and β-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy
Mahesh Kumar , Basanta Roul , Thirumaleshwara N. Bhat , Mohana K. Rajpalke
Thin Solid Films 520 ( 15) 4911 -4915
11
2012
Analysis of the temperature-dependent current–voltage characteristics and the barrier-height inhomogeneities of Au/GaN Schottky diodes
Basanta Roul , Thirumaleshwara N. Bhat , Mahesh Kumar , Mohana K. Rajpalke
Physica Status Solidi (a) 209 ( 8) 1575 -1578
9
2012
Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions
Mahesh Kumar , Basanta Roul , Thirumaleshwara N. Bhat , Mohana K. Rajpalke
Physica Status Solidi (a) 209 ( 5) 994 -997
7
2012
Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
Basanta Roul , Mohana K. Rajpalke , Thirumaleshwara N. Bhat , Mahesh Kumar
Journal of Applied Physics 109 ( 4) 044502
19
2011
Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE
Mahesh Kumar , Basanta Roul , Thirumaleshwara N. Bhat , Mohana K. Rajpalke
Journal of Nanoparticle Research 13 ( 3) 1281 -1287
10
2011
Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces
Deependra Kumar Singh , Basanta Roul , Rohit Pant , Arun Malla Chowdhury
Applied Physics Letters 116 ( 25) 252102
12
2020
Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE
Basanta Roul , Mohana K. Rajpalke , Thirumaleshwara N. Bhat , Mahesh Kumar
Journal of Crystal Growth 354 ( 1) 208 -211
10
2012
Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE
Mohana K. Rajpalke , Thirumaleshwara N. Bhat , Basanta Roul , Mahesh Kumar
Journal of Crystal Growth 314 ( 1) 5 -8
12
2011
Reduction of oxygen impurity at GaN/β-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux
Mahesh Kumar , Mohana K. Rajpalke , Basanta Roul , Thirumaleshwara N. Bhat
Journal of Crystal Growth 327 ( 1) 272 -275
4
2011
The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE
Mahesh Kumar , Mohana K. Rajpalke , Basanta Roul , Thirumaleshwara N. Bhat
Applied Surface Science 257 ( 6) 2107 -2110
8
2011
Indium Nitride Nanometric-Objects on c-Sapphire Grown by Plasma-Assisted Molecular Beam Epitaxy
Basanta Roul , Mahesh Kumar , Mohana K. Rajpalke , Thirumaleshwara N. Bhat
Nanoscience and Nanotechnology Letters 2 ( 3) 257 -260
1
2010
Droplet Epitaxy of InN Quantum Dots on Si(111) by RF Plasma-Assisted Molecular Beam Epitaxy
Mahesh Kumar , Basanta Roul , Thirumaleshwara N. Bhat , Mohana K. Rajpalke
Advanced Science Letters 3 ( 4) 379 -384
12
2010
Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy
Mahesh Kumar , Mohana K. Rajpalke , Thirumaleshwara N. Bhat , Basanta Roul
Journal of Applied Physics 110 ( 11) 114317
5
2011