Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE
作者： Mahesh Kumar , Basanta Roul , Thirumaleshwara N. Bhat , Mohana K. Rajpalke , Neeraj Sinha
DOI: 10.1007/S11051-010-0121-1
关键词: Quantum dot 、 Materials science 、 Plasma 、 Condensed matter physics 、 Morphology (linguistics) 、 Optoelectronics 、 Molecular beam epitaxy 、 Photoluminescence 、 Kinetics 、 Indium nitride 、 Scaling
摘要: One of the scientific challenges growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand fundamental processes that control morphology and distribution QDs. A systematic manipulation morphology, optical emission, structural properties InN/Si (111) QDs demonstrated by changing growth kinetics parameters such as flux rate time. Due large lattice mismatch, between Si (~8%), formed from Strannski–Krastanow (S–K) mode are dislocated. Despite variations in strain (residual) shape, both dot size pair separation show scaling behavior. We observed sizes, for samples grown under varying conditions, follow function.
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Alberto Pimpinelli, T. L. Einstein, Capture-zone scaling in island nucleation: universal fluctuation behavior. Physical Review Letters. ,vol. 99, pp. 226102- ,(2007) , 10.1103/PHYSREVLETT.99.226102
A. R. Avery, H. T. Dobbs, D. M. Holmes, B. A. Joyce, D. D. Vvedensky, NUCLEATION AND GROWTH OF ISLANDS ON GAAS SURFACES Physical Review Letters. ,vol. 79, pp. 3938- 3941 ,(1997) , 10.1103/PHYSREVLETT.79.3938
Jacques G. Amar, Fereydoon Family, Critical cluster size: Island morphology and size distribution in submonolayer epitaxial growth. Physical Review Letters. ,vol. 74, pp. 2066- 2069 ,(1995) , 10.1103/PHYSREVLETT.74.2066
Jacques G. Amar, Fereydoon Family, Mihail N. Popescu, Kinetics of submonolayer epitaxial growth Computer Physics Communications. ,vol. 146, pp. 1- 8 ,(2002) , 10.1016/S0010-4655(02)00428-9
M. C. Bartelt, J. W. Evans, Scaling analysis of diffusion-mediated island growth in surface adsorption processes. Physical Review B. ,vol. 46, pp. 12675- 12687 ,(1992) , 10.1103/PHYSREVB.46.12675
Fabio Biscarini, Martin Brinkmann, Sabine Graff, Mechanism of nonrandom pattern formation of polar-conjugated molecules in a partial wetting regime Physical Review B. ,vol. 66, pp. 165430- ,(2002) , 10.1103/PHYSREVB.66.165430
T. J. Krzyzewski, P. B. Joyce, G. R. Bell, T. S. Jones, Scaling behavior in InAs/GaAs(001) quantum-dot formation Physical Review B. ,vol. 66, pp. 201302- ,(2002) , 10.1103/PHYSREVB.66.201302
Jl Wu, Wladek Walukiewicz, KM Yu, JW Ager Iii, EE Haller, Hai Lu, William J Schaff, Yoshiki Saito, Yasushi Nanishi, None, Unusual properties of the fundamental band gap of InN Applied Physics Letters. ,vol. 80, pp. 3967- 3969 ,(2002) , 10.1063/1.1482786
WC Ke, CP Fu, CY Chen, L Lee, CS Ku, Wu-Ching Chou, W-H Chang, MC Lee, Wei-Kuo Chen, WJ Lin, YC Cheng, None, Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy Applied Physics Letters. ,vol. 88, pp. 191913- ,(2006) , 10.1063/1.2203510
Y. Ebiko, S. Muto, D. Suzuki, S. Itoh, H. Yamakoshi, K. Shiramine, T. Haga, K. Unno, M. Ikeda, SCALING PROPERTIES OF INAS/GAAS SELF-ASSEMBLED QUANTUM DOTS Physical Review B. ,vol. 60, pp. 8234- 8237 ,(1999) , 10.1103/PHYSREVB.60.8234