Temperature-dependent photoluminescence of GaN grown on β-Si3N4/Si (1 1 1) by plasma-assisted MBE
作者： Mahesh Kumar , Mohana K. Rajpalke , Basanta Roul , Thirumaleshwara N. Bhat , P. Misra
DOI: 10.1016/J.JLUMIN.2010.11.001
关键词: Silicon nitride 、 Epitaxy 、 Photoluminescence 、 Crystallography 、 Exciton 、 Gallium nitride 、 Raman spectroscopy 、 Molecular beam epitaxy 、 Materials science 、 Analytical chemistry 、 Thin film
摘要: Abstract Photoluminescence (PL) of high quality GaN epitaxial layer grown on β-Si 3 N 4 /Si (1 1 1) substrate using nitridation–annealing–nitridation method by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated in the range 5–300 K. Crystallinity epilayers evaluated resolution X-ray diffraction (HRXRD) and surface morphology Atomic Force Microscopy (AFM) scanning electron microscopy (HRSEM). The temperature-dependent photoluminescence spectra showed an anomalous behaviour with ‘S-like’ shape free exciton (FX) emission peaks. Distant shallow donor–acceptor pair (DAP) line peak at approximately 3.285 eV also observed 5 K, followed LO replica sidebands separated 91 meV. activation energy for to be ∼27.8±0.7 meV from PL studies. Low carrier concentrations were ∼4.5±2×10 17 cm −3 measurements it indicates silicon nitride layer, which not only acts as a growth buffer but effectively prevents Si diffusion epilayers. absence yellow band around 2.2 eV signifies film. tensile stress film calculated thermal model agrees very well that derived Raman spectroscopy.
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