Luminescence in epitaxial GaN : Cd

作者: O. Lagerstedt , B. Monemar

DOI: 10.1063/1.1663574

关键词:

摘要: … DISCUSSION AND CONCLUSIONS The experimental results presented in this paper give a more detailed picture of luminescent transitions in Cd-doped GaN than was known before. …

参考文章(19)
J. A. Van Vechten, J. C. Phillips, New Set of Tetrahedral Covalent Radii Physical Review B. ,vol. 2, pp. 2160- 2167 ,(1970) , 10.1103/PHYSREVB.2.2160
M Ilegems, Vapor epitaxy of gallium nitride Journal of Crystal Growth. pp. 360- 364 ,(1972) , 10.1016/0022-0248(72)90184-4
M. Ilegems, R. Dingle, Luminescence of Be‐ and Mg‐doped GaN Journal of Applied Physics. ,vol. 44, pp. 4234- 4235 ,(1973) , 10.1063/1.1662930
K. Colbow, Free-to-Bound and Bound-to-Bound Transitions in CdS Physical Review. ,vol. 141, pp. 742- 749 ,(1966) , 10.1103/PHYSREV.141.742
A. S. Barker, M. Ilegems, Infrared Lattice Vibrations and Free-Electron Dispersion in GaN Physical Review B. ,vol. 7, pp. 743- 750 ,(1973) , 10.1103/PHYSREVB.7.743
J.I. Pankove, Luminescence in GaN Journal of Luminescence. ,vol. 7, pp. 114- 126 ,(1973) , 10.1016/0022-2313(73)90062-8
P. J. Dean, J. L. Merz, Pair Spectra and "Edge Emission" in Zinc Selenide Physical Review. ,vol. 178, pp. 1310- 1318 ,(1969) , 10.1103/PHYSREV.178.1310
J.J. Hopfield, A theory of edge-emission phenomena in CdS, ZnS and ZnO Journal of Physics and Chemistry of Solids. ,vol. 10, pp. 110- 119 ,(1959) , 10.1016/0022-3697(59)90064-2
M. Ilegems, H.C. Montgomery, Electrical properties of n-type vapor-grown gallium nitride Journal of Physics and Chemistry of Solids. ,vol. 34, pp. 885- 895 ,(1973) , 10.1016/S0022-3697(73)80090-3