Electrical properties of n-type vapor-grown gallium nitride

摘要: Abstract Hall measurements are reported for undoped and Zn-doped vapor-grown single crystal GaN on (0001) Al 2 O 3 layers with 298 K carrier concentrations ( n -type) between 1·4×10 17 cm −3 9×10 19 . Then ∼10 crystals (undoped) have mobilities up to μ ∼440 /V sec at K. Their conduction behavior can be described by a two-donor model 150 1225 impurity band transport below Crystals ≥8×10 18 show metallic no appreciable variation in or 10 Results of mass spectrographic analyses indicate that the total level impurities detected is too low account observed electron concentration level, suggest presence high native donors these crystals. No significant reduction was achieved Zn doping 20 under growth conditions present work, evidence found conductivity p -type may GaN. The influence factors such as rate, crystalline perfection vapor phase composition during properties described.