Observation of nitrogen vacancy in proton-irradiated AlxGa1−xN
作者： Qiaoying Zhou , M. O. Manasreh , M. Pophristic , S. Guo , I. T. Ferguson
DOI: 10.1063/1.1415422
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摘要: The optical absorption spectra of nitrogen vacancy (VN) in proton-irradiated AlxGa1−xN samples are observed. obtained for with 0.55⩽x⩽1 exhibit a peak and shoulder their energy positions dependent on the Al mole fraction. were interpreted as transitions from valence band to VN levels located below conduction x>0.55. results used extrapolate level 0⩽x⩽0.55. A linear fit observed yields E(VN)=4.230+0.680x (eV) all values x. Thermal annealing various shows that total integrated area, which is directly proportional defect density, attributed decreased temperature increased.
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