Negative differential capacitance in n-GaN/p-Si heterojunctions
作者： Mahesh Kumar , Thirumaleshwara N. Bhat , Mohana K. Rajpalke , Basanta Roul , Neeraj Sinha
DOI: 10.1016/J.SSC.2010.12.023
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摘要: Abstract Negative differential capacitance (NDC) has been observed in n-GaN/p-Si heterojunctions grown by plasma assisted molecular beam epitaxy (PAMBE). The NDC is at low frequencies 1 and 10 kilohertz (kHz) disappeared a higher testing frequency of 100 kHz. also studied with temperature found that it above 323 ∘C. Current–Voltage ( I – V ) characteristics n-GaN /p-Si heterojunction were measured different temperatures are attributed to the space-charge-limited current (SCLC). A simple model involving two quantum states proposed explain behavior.
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R. Ghosh, D. Basak, Electrical and ultraviolet photoresponse properties of quasialigned ZnO nanowires/p-Si heterojunction Applied Physics Letters. ,vol. 90, pp. 243106- ,(2007) , 10.1063/1.2748333
A. Dadgar, M. Poschenrieder, J. Bläsing, K. Fehse, A. Diez, A. Krost, Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking Applied Physics Letters. ,vol. 80, pp. 3670- 3672 ,(2002) , 10.1063/1.1479455
S. E. Aleksandrov, T. A. Gavrikova, V. A. Zykov, Photoelectric properties of isotype and anisotype Si/GaN:O heterojunctions Semiconductors. ,vol. 34, pp. 1295- 1300 ,(2000) , 10.1134/1.1325426
V V Ilchenko, V V Marin, S D Lin, K Y Panarin, A A Buyanin, O V Tretyak, Room temperature negative differential capacitance in self-assembled quantum dots Journal of Physics D: Applied Physics. ,vol. 41, pp. 235107- ,(2008) , 10.1088/0022-3727/41/23/235107
Rachel A. Oliver, Menno J. Kappers, Colin J. Humphreys, G. Andrew D. Briggs, Growth modes in heteroepitaxy of InGaN on GaN Journal of Applied Physics. ,vol. 97, pp. 013707- ,(2005) , 10.1063/1.1823581
G. Koblmüller, C. S. Gallinat, S. Bernardis, J. S. Speck, G. D. Chern, E. D. Readinger, H. Shen, M. Wraback, Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy Applied Physics Letters. ,vol. 89, pp. 071902- ,(2006) , 10.1063/1.2335685
S. D. Lin, V. V. Ilchenko, V. V. Marin, K. Y. Panarin, A. A. Buyanin, O. V. Tretyak, Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots Applied Physics Letters. ,vol. 93, pp. 103103- ,(2008) , 10.1063/1.2975169
Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, B. M. Ataev, Observation of 430 nm Electroluminescence from ZnO/GaN Heterojunction Light-Emitting Diodes Applied Physics Letters. ,vol. 83, pp. 2943- 2945 ,(2003) , 10.1063/1.1615308
S. D. Lin, V. V. Ilchenko, V. V. Marin, N. V. Shkil, A. A. Buyanin, K. Y. Panarin, O. V. Tretyak, Observation of the negative differential capacitance in Schottky diodes with InAs quantum dots near room temperature Applied Physics Letters. ,vol. 90, pp. 263114- ,(2007) , 10.1063/1.2752737
Basant Chitara, D S Ivan Jebakumar, C N R Rao, S B Krupanidhi, Negative differential resistance in GaN nanocrystals above room temperature Nanotechnology. ,vol. 20, pp. 405205- 405205 ,(2009) , 10.1088/0957-4484/20/40/405205