Purcell Effect in the Stimulated and Spontaneous Emission Rates of Nanoscale Semiconductor Lasers

摘要: Nanoscale semiconductor lasers have been developed recently using either metal, metallo-dielectric or photonic crystal nanocavities. While the technology of nanolasers is steadily being deployed, their expected performance for on-chip optical interconnects still largely unknown due to a limited understanding some key features. Specifically, as cavity size reduced with respect emission wavelength, stimulated and spontaneous rates are modified, which known Purcell effect in context quantum electrodynamics. This major impact 'threshold-less' behavior modulation speed, but its role poorly understood practical laser structures, characterized by significant homogeneous inhomogeneous broadening complex spatial distribution active material field. In this work, we investigate taking into account carriers' volume region over wide range dimensions emitter/cavity linewidths, enabling detailed modeling static dynamic characteristics micro- nano-scale single-mode rate-equations analysis. The ultimate limits scaling down these nanoscale light sources terms enhancement speed also discussed showing that ultrafast properties predicted direct consequence rate via reduction mode volume.