Observation and study of the negative magnetoresistance in porous silicon
作者： B. Chouaibi , A. Benfredj , S. Romdhane , M. Bouaïcha , H. Bouchriha
DOI: 10.1016/J.SSE.2012.07.019
关键词: Nanowire 、 Condensed matter physics 、 Semiconductor 、 Magnetoresistance 、 Magnetic field 、 Magnetostatics 、 Porous silicon 、 Weak localization 、 Materials science 、 Thin film
摘要: Abstract We investigate the effect of a static magnetic field on electrical properties thin films porous silicon. observe relative variation resistance with respect to intensity applied field. This called magnetoresistance (MR) has been found be negative at room temperature in entire range (under 8000 G). The MR depends strongly voltage and reaches up 5% value 8000 G. analysis based 1D weak localization theory (WL) diffusive semiconductors, from which consistent picture emerges, considering PS film as networks quasi-one-dimensional wires. give an explicit expression for WL correction depending only phase coherence length L φ . A good agreement is observed between experimental data theory.
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