Low-dimensional hopping conduction in porous amorphous silicon
作者： A.I. Yakimov , N.P. Stepina , A.V. Dvurechenskii , L.A. Scherbakova
DOI: 10.1016/0921-4526(94)00911-E
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摘要: Abstract We report measurements of the temperature, bias voltage and magnetic field dependence hopping conductivity in amorphous silicon exposed to anodic etching aqueous HF solution (porous silicon). Our results indicate that this system possesses properties a one-dimensional with fractal dimension different intervals temperature.
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