The temperature-induced transition from 3d to 1d hopping conduction in porous amorphous
作者： A I Yakimov , A V Dvurechenskii , N P Stepina , L A Scherbakova , C J Adkins
DOI: 10.1088/0953-8984/9/4/009
关键词:
摘要: We have investigated variable-range hopping conduction in amorphous (c = 4 and 7 at.%) samples obtained by ion implantation treatment anodic etching HF solution - porous silicon. As temperature is reduced, we find a crossover from the Mott form to simply activated law, . This behaviour attributed temperature-induced transition 3d 1d network of weakly interconnected silicon quantum `wires'. The mean diameter wires, D 5 6 nm, was deduced analysis conductivity data agreement with XTEM STM observations. It found that density states material smaller than compact due broadening impurity band caused lateral confinement wires.
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