Conductivity behaviour of thick-film tin dioxide gas sensors

摘要: Abstract SnO 2 semiconductor gas sensors undoped and doped with Pt Pd are prepared by the thick-film technique on Al O 3 substrates different electrode structures. The layer structure is characterized scanning electron microscopy (SEM) X-ray diffraction. temperature dependence of conductance these measured d.c. a.c. techniques up to 300 kHz in range 800 K under synthetic air air/250 ppm CO mixtures, as well sensor response time due changes from air/CO. results show a temperature-activated conduction mechanism which discussed using barrier model. governed diffusion processes into porous surface reaction times.