Resonant Acceptor Level in Zero‐Gap Semiconductors. Single and Multiple Scattering Effects

摘要: A theory of a resonant acceptor level in zero gap semiconductors is developed taking into account the multiple scattering processes. It shown that results accounting only for contribution proportional to impurity concentration describe properly evolution activation energy Hg1—xCdxTe alloys. However, it necessary include effects obtain reliable expressions density states and conductivity. Analytical are obtained discussed. Comparison with experimental data made when possible. On developpe la theorie des etats accepteurs resonnants dans les semiconducteurs de nul. On montre que resultats obtenus au premier ordre en densite ďimpuretes sont suffisants pour decrire ľevolution ľenergie ďionisation alliages Hg1—xCdxTe. Il est toutefois necessaire prendre compte effets diffusion sur impuretes differentes obtenir physiquement acceptables ce qui concerne ďetats et conductivite. Les formules obtenues ensuite discutees comparees, lorsque cela possible, aux experimentaux.