Hole mobility in p-type HgTe
作者： Z. Dziuba , K. Szlenk
DOI: 10.1016/0022-3697(84)90106-9
关键词: Charge carrier 、 Density of states 、 Electrical resistivity and conductivity 、 Condensed matter physics 、 Impurity 、 Hall effect 、 Inorganic compound 、 Analytical chemistry 、 Electron mobility 、 Acceptor 、 Chemistry
摘要: Abstract Experimental data concerning the electrical conduction and Hall coefficient in HgTe samples with acceptor states have been collected analysed. In analysis three ranges of concentration distinguished: a low range up to about 5 × 10 15 cm −3 (pure samples), high from 16 18 ( p -like an extremely above -type samples). pure holes are valence band, “holes” impurity strong mixing impurity-valence band. The mobility band is order 2 Vs . decreases increasing 3 125 independent equal
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