Negative magnetoresistance and impurity band conduction in an In0.53Ga0.47As/InP heterostructure
作者： Z. Dziuba , T. Przesławski , K. Dybko , M. Górska , J. Marczewski
DOI: 10.1063/1.370170
关键词: Condensed matter physics 、 Substrate (electronics) 、 Impurity 、 Molecular beam epitaxy 、 Heterojunction 、 Materials science 、 Hall effect 、 Gallium arsenide 、 Thermal conduction 、 Magnetoresistance
摘要: The electrical conduction in an n-type In0.53Ga0.47As/InP sample grown by molecular beam epitaxy has been analyzed the magnetic field up to 1.5 T, at temperatures from 15 295 K. ascribed impurity band (IB), located interface between epilayer InGaAs and substrate InP. contribution of electrons bulk layer was negligible. IB almost metallic. We observed within two conducting channels which give positive negative Hall voltage. magnetoresistance low negative, high positive. phenomenologicaly described carriers with constant concentration mobility increasing proportionally square applied field.
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