Magnetic field sensors based on undoped In 0.53 Ga 0.47 As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition
作者： A. Wolkenberg , T. Przesławski , A. Jasik , J. Kaniewski , K. Regiński
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摘要: In this paper we, describe the design and fabrication process of Hall magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence geometric correction factor GH on sensitivity parameters these devices has been investigated. results have used in order to optimize structure behavior at temperatures ranging from 3 300 K. large changes galvanomagnetic vs. magnetic field temperature allow be signal measurement sensors.
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