Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures
作者： Z. Dziuba , J. Antoszewski , J. M. Dell , L. Faraone , P. Kozodoy
DOI: 10.1063/1.366137
关键词:
摘要: Experimental magnetic field dependent Hall and resistivity data is presented for two modulation-doped AlGaN/GaN heterostructures in the temperature range from 6 to 300 K a up 12 T. The mobility concentration of electrons within two-dimensional electron gas (2DEG) at interface underlying GaN layer are readily separated characterized using quantitative spectrum analysis. observed transport parameters 2DEG explained classical band theory degenerate gas. Analysis dependencies indicates that dominated by carriers conduction case low-doping ( 1018 cm−3). simultaneous analysis multilayer structure applied this work renders results applicable directly...
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sci-hub.se 参考文章(23)
Z. Dziuba, Mobility spectrum analysis of the electrical conduction Acta Physica Polonica A. ,vol. 80, pp. 827- 839 ,(1991) , 10.12693/APHYSPOLA.80.827
Gyu‐Chul Yi, Bruce W. Wessels, Compensation of n‐type GaN Applied Physics Letters. ,vol. 69, pp. 3028- 3030 ,(1996) , 10.1063/1.116828
M. Asif Khan, J. N. Kuznia, J. M. Van Hove, D. T. Olson, S. Krishnankutty, R. M. Kolbas, Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 58, pp. 526- 527 ,(1991) , 10.1063/1.104575
H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, M. Burns, Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies Journal of Applied Physics. ,vol. 76, pp. 1363- 1398 ,(1994) , 10.1063/1.358463
R. P. Joshi, Temperature-dependent electron mobility in GaN: Effects of space charge and interface roughness scattering Applied Physics Letters. ,vol. 64, pp. 223- 225 ,(1994) , 10.1063/1.111511
J. G. Kim, A. C. Frenkel, H. Liu, R. M. Park, Growth by molecular beam epitaxy and electrical characterization of Si‐doped zinc blende GaN films deposited on β‐SiC coated (001) Si substrates Applied Physics Letters. ,vol. 65, pp. 91- 93 ,(1994) , 10.1063/1.113085
S Keller, BP Keller, Y‐F Wu, B Heying, D Kapolnek, JS Speck, UK Mishra, SP DenBaars, None, Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 68, pp. 1525- 1527 ,(1996) , 10.1063/1.115687
Motohiko Saitoh, Theory of Impurity Bands in Magnetic Fields. III. Temperature Dependence Journal of the Physical Society of Japan. ,vol. 29, pp. 1470- 1478 ,(1970) , 10.1143/JPSJ.29.1470
V. W. L. Chin, T. L. Tansley, T. Osotchan, Electron mobilities in gallium, indium, and aluminum nitrides Journal of Applied Physics. ,vol. 75, pp. 7365- 7372 ,(1994) , 10.1063/1.356650
M. Asif Khan, Q. Chen, C. J. Sun, M. Shur, B. Gelmont, Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition Applied Physics Letters. ,vol. 67, pp. 1429- 1431 ,(1995) , 10.1063/1.114516